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| MICRONAS HAL320 Differential Hall Effect Sensor IC Edition July 15, 1998 6251-439-1DS MICRONAS HAL320 Differential Hall Effect Sensor IC in CMOS technology Introduction The HAL 320 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates (2.25 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL 320 is a differential sensor which responds to spatial differences of the magnetic field. The Hall voltages at the two Hall plates, S1 and S2, are amplified with a differential amplifier. The differential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of B = BS1 - BS2 for correct operation. Basically, there are two ways to generate the differential signal B: - Rotating a multi-pole-ring in front of the branded side of the package (see Fig. 4, Fig. 5, and Fig. 6). - Back-bias applications: A magnet on the back side of the package generates a back-bias field at both Hall plates. The differential signal B results from the magnetic modulation of the back-bias field by a rotating ferromagnetic target. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature. The sensor is designed for industrial and automotive applications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from -40 C up to 150 C. The HAL 320 is an ideal sensor for target wheel applications, ignition timing, anti-lock brake systems, and revolution counting in extreme automotive and industrial environments The HAL 320 is available in two SMD-packages (SOT-89A and SOT-89B) and in a leaded version (TO-92UA). Features: - distance between Hall plates: 2.25 mm - operates from 4.5 V to 24 V supply voltage - switching offset compensation at 62 kHz - overvoltage protection - reverse-voltage protection of VDD-pin - short-circuit protected open-drain output by thermal shutdown - operates with magnetic fields from DC to 10 kHz - output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2 - on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range - EMC corresponding to DIN 40839 Marking Code Type A HAL320SF, HAL320SO, HAL320UA 320A Temperature Range E 320E C 320C Operating Junction Temperature Range (TJ) A: TJ = -40 C to +170 C E: TJ = -40 C to +100 C C: TJ = 0 C to +100 C The relationship between ambient temperature (TA) and junction temperature (TJ) is explained on page 11. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, E, or C Package: SF for SOT-89B SO for SOT-89A UA for TO-92UA Type: 320 Example: HAL320UA-E Type: 320 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 2 Micronas HAL320 Solderability - Package SOT-89A and SOT-89B: according to IEC68-2-58 - Package TO-92UA: according to IEC68-2-20 VDD 1 OUT Clock GND VDD 1 Reverse Voltage & Overvoltage Protection Hall Plate S1 Switch Hall Plate S2 HAL320 Temperature Dependent Bias Hysteresis Control Short Circuit & Overvoltage Protection Comparator Output OUT 3 3 2 GND 2 Fig. 1: Pin configuration Fig. 2: HAL320 block diagram Functional Description This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.25 mm apart that switches in response to differential magnetic fields. If magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the differential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The builtin hysteresis eliminates oscillation and provides switching behavior of the output without oscillation. Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the "switching offset compensation technique": An internal oscillator provides a two phase clock (see Fig. 3). The difference of the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled differential Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch level to the actual switching of the output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-Pin and VDD-Pin together with external series resistors. Reverse current is limited at the VDD-Pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -15 V. fosc t DB DBON t VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 3: Timing diagram Micronas 3 HAL320 Outline Dimensions 4.55 0.1 0.125 0.7 1.7 2 y sensitive area S1 sensitive area S2 0.125 0.3 4.55 0.1 1.7 2 y sensitive area S1 sensitive area S2 4 0.2 x1 x2 2.6 0.1 top view 4 0.2 x1 x2 2.55 0.1 top view 1 0.4 2 3 0.4 0.4 1 2 3 0.4 1.53 0.05 1.15 0.05 0.4 1.5 3.0 1.5 0.4 3.0 branded side branded side 0.06 0.04 SPGS7001-6-B3/1E SPGS0022-2-B3/1E 0.06 0.04 Fig. 4: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm Fig. 6: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.04 g Dimensions in mm 1.5 0.05 0.3 4.06 0.1 2.03 y 3.05 0.1 x1 x2 sensitive area S1 sensitive area S2 Dimensions of Sensitive Areas 0.08 mm x 0.17 mm (each) 0.48 0.55 0.36 1 2 3 0.5 Positions of Sensitive Areas 3.1 SOT-89A 14.0 min. SOT-89B TO-92UA x1 = -1.125 mm 0.2 mm x2 = 1.125 mm 0.2 mm 0.42 1.27 1.27 2.54 x2 - x1 = 2.25 mm 0.01 mm y = 0.98 mm 0.2 mm y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm branded side x1 and x2 are referenced to the center of the package 0.8 45 SPGS7002-6-B/1E Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 4 Micronas HAL320 Absolute Maximum Ratings Symbol VDD -VP -IDD IDDZ VO IO IOmax IOZ TS TJ Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 1 1 3 3 3 3 Min. -15 -242) - -2003) -0.3 - - -2003) -65 -40 -40 Max. 281) - 501) 2003) 281) 30 2503) 2003) 150 150 1704) Unit V V mA mA V mA mA mA C C 1) as long as T max is not exceeded J 2) with a 220 series resistance at pin 3) t < 2 ms 4) t < 1000h 1 corresponding to test circuit 1 Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol VDD IO VO Rv Parameter Supply Voltage Continuous Output On Current Output Voltage Series Resistor Pin No. 1 3 3 1 Min. 4.5 - - - Max. 24 20 24 270 Unit V mA V Micronas 5 HAL320 Electrical Characteristics at TJ = -40 C to +170 C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol IDD IDD VDDZ VOZ VOL VOL VOL IOH IOH fosc fosc ten(O) Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Pin No. 1 1 Min. 2.8 1.8 Typ. 4.7 4.7 Max. 6.8 7.5 Unit mA mA IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms VDD = 12 V, IO = 20 mA, TJ = 25 C IO = 20 mA IO = 25 mA VOH = 4.5 V... 24 V, DB < DBOFF , TJ = 25 C VOH = 4.5 V... 24 V, DB < DBOFF , TJ 150 C TJ = 25 C Conditions TJ = 25 C 1 - 28.5 32.5 V 3 - 28 32.5 V Output Voltage 3 - 170 250 mV Output Voltage over Temperature Range Output Voltage over Temperature Range Output Leakage Current 3 - 170 400 mV 3 - 210 500 mV A A 3 - - 1 Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD 3 - - 10 - 42 62 75 kHz - 40 62 80 kHz s 3 - 35 - VDD = 12 V, DB > DBON + 2mT or DB < DBOFF - 2mT VDD = 12 V, RL = 820 , CL = 20 pF VDD = 12 V, RL = 820 , CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 8 tr tf RthJSB case SOT-89A, SOT-89B RthJS case TO-92UA Output Rise Time 3 - 80 400 ns Output Fall Time 3 - 50 400 ns Thermal Resistance Junction to Substrate Backside - 150 200 K/W Thermal Resistance Junction to Soldering Point - 150 200 K/W 6 Micronas HAL320 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 4.5 V to 24 V Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points (Condition: -10 mT < B0 < 10 mT) Positive flux density values refer to the magnetic south pole at the branded side ot the package. B = BS1 - BS2 Parameter Min. On point BON B > BON Off point BOFF B < BOFF Hysteresis BHYS = BON - BOFF Offset BOFFSET = (BON + BOFF)/2 -1.5 -40 C Typ. 1.2 Max. 2.5 Min. -1.5 25 C Typ. 1.2 Max. 2.5 Min. -2 100 C Typ. 1.2 Max. 3 Min. -2.5 170 C Typ. 1.1 Max. 3.5 mT Unit -2.5 -0.6 1.5 -2.5 -0.6 1.5 -3 -0.5 2 -3.5 -0.4 2.5 mT 1 1.8 4 1 1.8 4 1 1.7 4 0.8 1.5 4 mT -2 0.3 2 -2 0.3 2 -2.5 0.4 2.5 -3 0.4 3 mT In back-biased applications, sensitivity mismatch between the two Hall plates S1 and S2 can lead to an additional offset of the magnetic switching points. In back-biased applications with the magnetic preinduction B0, this sensitivity mismatch generates the magnetic offset BOFFSETbb = |S1 - S2|/S1 @ B0 + BOFFSET. Parameter Sensitivity mismatch1) 1) 2) -40 C |S1 - S2|/S1 1.52) 25 C 1.02) 100 C 1.02) 170 C 0.52) Unit % Mechanical stress from packaging can influence sensitivity mismatch. All values are typical values. The magnetic switching points are checked at room temperature at a magnetic preinduction of B0 = 150 mT. These magnetic parameters may change under external pressure and during the lifetime of the sensor. Parameter Min. On point BONbb Off point BOFFbb Hysteresis BHYS Offset BOFFSETbb -4.5 -5.5 1 -5 25 C Typ. 1.5 -0.3 1.8 0.6 Max. 5.5 4.5 4 +5 mT mT mT mT Unit 5.0 VOH Output Voltage 2.0 VOL 2.0 DBOFF min DBOFF 0 DBHYS DBON DBON max DB = BS1 - BS2 1.0 Fig. 7: Definition of switching points and hysteresis Fig. 8: Recommended pad size for SOT-89A and SOT-89B; Dimensions in mm Micronas 7 HAL320 mT 2.0 VDD = 12 V BON 1.5 BOFF 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 -50 BON BOFF mT 2.0 1.5 BON 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2 BOFF TA = -40 C TA = 25 C TA = 100 C TA = 170 C 0 50 100 150 TA 200 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V Fig. 9: Magnetic switch points versus temperature Fig. 11: Magnetic switch points versus supply voltage mT 2.0 1.5 BON 1.0 IDD mA 15 BON BOFF 10 5 0.5 0.0 -0.5 -1.0 BOFF -1.5 -2 -15 -15 -10 -5 -10 TA = -40 C TA = 25 C TA = 100 C TA = 150 C -5 0 TA = -40 C TA = 25 C TA = 150 C 0 5 10 15 20 25 VDD 30 V 0 5 10 15 20 25 30 V VDD Fig. 10: Magnetic switch points versus supply voltage Fig. 12: Supply current versus supply voltage 8 Micronas HAL320 mA 8 7 IDD 6 TA = -40 C 5 TA = 25 C 4 3 2 TA = 150 C fosc kHz 100 VDD = 4.5 V...24 V 90 80 70 60 50 40 30 20 1 0 10 0 -50 200 C 1 2 3 4 5 VDD 6V 0 50 100 150 TA Fig. 13: Supply current versus supply voltage Fig. 15: Internal chopper frequency versus ambient temperature mA 8 7 IDD 6 5 4 3 2 1 0 -50 VDD = 12 V VDD = 4.5 V VOL mV 400 IO = 20 mA 350 300 TA = 170 C 250 200 150 100 50 0 TA = 100 C TA = 25 C TA = -40 C 0 50 100 150 TA 200 C 0 5 10 15 20 25 VDD 30 V Fig. 14: Supply current versus ambient temperature Fig. 16: Output low voltage versus supply voltage Micronas 9 HAL320 mV 600 IO = 20 mA mA 104 103 VOL 500 IOH 102 101 TA = 170 C TA = 150 C TA = 100 C 400 100 300 10-1 10-2 200 TA = 100 C TA = 25 C 100 TA = 40 C 10-3 10-4 10-5 0 3 4 5 6 VDD 7V 10-6 15 TA = 170 C TA = 25 C TA = -40 C 20 25 30 VOH 35 V Fig. 17: Output low voltage versus supply voltage Fig. 19: Output high current versus output voltage mV 400 IO = 20 mA A 102 101 VOL 300 VDD = 4.5 V VDD = 24 V 10-1 200 10-2 VOH = 4.5 V IOH 100 VOH = 24 V 10-3 100 10-4 0 -50 0 50 100 150 TA 200 C 10-5 -50 0 50 100 150 TA 200 C Fig. 18: Output low voltage versus ambient temperature Fig. 20: Output leakage current versus ambient temperature 10 Micronas HAL320 Application Notes Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress on the sensor must be avoided if the sensor is used under back-biased conditions. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. In order to assure switching the sensor on and off in a back-biased application, the minimum magnetic modulation of the differential field should amount to more than 10% of the magnetic preinduction. If the HAL 320 sensor IC is used in back-biased applications, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the ICs. This stress may cause drifts of the magnetic parameters indicated in this data sheet. For electromagnetic immunity, it is recommended to apply a 4.7 nF capacitor between VDD (pin 1) and Ground (pin 2). For automotive applications, a 220 W series resistor to pin 1 is recommended. Because of the IDD peak at 3.5 V, the series resistor should not be greater than 270 . The series resistor and the capacitor should be placed as close as possible to the IC. For optimal EMC behavior, the test circuits in Fig. 21 and Fig. 22 are recommended. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equations are valid: - for SOT-89x: - for TO-92UA: T = IDD * VDD * RthJSB T = IDD * VDD * RthJA Recommended Test Circuits for Electromagnetic Compatibility Test pulses VEMC corresponding to DIN 40839. RV 220 1 VEMC VP 4.7 nF 2 GND VDD OUT 3 20 pF RL 1.2 k Fig. 21: Test circuit 2: test procedure for class A RV 220 1 VEMC 4.7 nF 2 GND VDD OUT 3 RL 680 Fig. 22: Test circuit 1: test procedure for class C For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Micronas 11 HAL320 Data Sheet History 1. Final data sheet: "HAL 320 Differential Hall Effect Sensor IC", July 15, 1998, 6251-439-1DS. First release of the final data sheet. Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (07/1998) Order No. 6251-439-1DS All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 12 Micronas HAL 300, HAL 320 Data Sheet Supplement Subject: Data Sheet Concerned: Supplement: Edition: Improvement of SOT-89B Package HAL 300, 6251-345-1DS, Edition July 15, 1998 HAL 320, 6251-439-1DS, Edition July 15, 1998 No. 1/ 6251-532-1DSS July 4, 2000 Changes: - position tolerance of the sensitive area reduced - tolerances of the outline dimensions reduced - thickness of the leadframe changed to 0.15 mm (old 0.125 mm) - HAL 300 now available in SOT-89B - SOT-89A will be discontinued in December 2000 4.55 0.15 0.3 1.7 2 y 4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4 x1 x2 sensitive area S1 0.2 sensitive area S2 0.2 2.55 top view 1.15 branded side 0.06 0.04 SPGS0022-5-B3/1E Position of sensitive area HAL 300 x1+x2 x1= x2 y (2.050.001) mm 1.025 mm nominal 0.95 mm nominal HAL 320 (2.250.001) mm 1.125 mm nominal 0.95 mm nominal Note: A mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerances of the sensitive areas are defined in the package diagram. Micronas page 1 of 1 |
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